Company Filing History:
Years Active: 1996-1999
Title: Koichi Sawahata: Innovator in Ion Implantation Technology
Introduction
Koichi Sawahata is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of ion implantation technology, holding a total of 8 patents. His work focuses on developing advanced simulation devices and methods that enhance the accuracy and efficiency of ion implantation processes.
Latest Patents
One of his latest patents is an ion implantation process simulation device that realizes accurate results. This device includes a Dual Pearson data extracting unit that generates a Dual Pearson data table from ion implantation profile data. It also features a Dual Pearson data for interpolation obtaining unit, which obtains parameters for interpolation and extrapolation of a dose coefficient from the Dual Pearson data table. Additionally, a dose coefficient interpolating/extrapolating unit expresses an ion implantation profile by linearly connecting two functions representing an amorphous component and a channeling component. This innovative device uses a dose-independent moment parameter and a coefficient of linear connection dependent on dose to interpolate and extrapolate a logarithmic value of a channeling component dose coefficient with respect to logarithmic values of all dose values. Finally, a simulation result outputting unit provides the output of the simulation results.
Another notable patent involves a method capable of accurately simulating ion implantation at high speed. This method utilizes the Monte Carlo method to produce a plurality of triangle meshes on a polygonal substrate, labeling them with serial numbers at the first step. An ion is implanted into the polygonal substrate at the second step. The third step involves checking the triangle meshes in ascending order until a specific triangle mesh containing the implanted ion is found. Point defect concentration is extracted from this specific triangle mesh at the fourth step. Random numbers are generated to calculate the scattering of the implanted ion at the fifth step. The point defect concentration is then renewed in the specific triangle mesh at the sixth step. The energy, position, and traveling direction of the implanted ion are updated at the seventh step. Steps three to seven are repeated until the implanted ion comes to a stop in the polygonal substrate.
Career Highlights
Koichi Sawahata is currently employed at NEC Corporation, where he continues to innovate in the field of ion implantation technology. His work has significantly impacted the efficiency and accuracy of ion implantation processes, making him a key figure in this area of research.
Collaborations
He collaborates