The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Jul. 26, 1996
Koichi Sawahata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for simulating an impurity distribution in a multilayer structure includes analytically simulating an impurity distribution for each layer to obtain a first impurity distribution profile for each layer by using impurity distribution moments defined for the material of each layer, analytically simulating a point defect distribution for a crystal layer to obtain a point defect distribution profile by using the first impurity distribution profile and point defect distribution moments defined for the material of crystal layer, simulating a thermal diffusion to obtain a final impurity distribution profile for each layer by using the first impurity distribution profile and point defect distribution profile. The point defect distribution moments are obtained previously for the material of the crystal layer by Monte Carlo method under typical conditions to obviate using the Monte Carlo method for each simulation under a specified condition.