The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1998
Filed:
Oct. 12, 1995
Koichi Sawahata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An ion implantation simulation system includes a grid generating portion for generating an orthogonal grid with respect to a two-dimensional configuration of a simulation object, an elongated segment extracting portion for extracting elongated segments defined by two grid lines in the orthogonal grid, a cell analyzing portion for extracting cells defined by adjacent grid lines perpendicular to the longer edge of the elongated segment, in the extracted elongated segments, and linearly rearranging polygon elements presenting in the cell along the longer edge direction, simulation performing portion performing linear ion implantation simulation with respect to the cell, in which the polygon elements are linearly rearranged, and a calculation result registering portion for registering an impurity concentration obtained as a result of simulation for each polygon element and registering the impurity concentration in each polygon element.