The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Oct. 30, 1997
Koichi Sawahata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
On simulating ion implantation on the basis of Monte Carlo method, a plurality of triangle meshes are produced to a polygonal substrate to be label serial numbers at a first step. An ion is implanted as an implanted ion to the polygonal substrate at a second step. At a third step, the triangle meshes are checked in an ascending order until one of triangle meshes is found as a specific triangle mesh in which the implanted ion is positioned. Point defect concentration is extracted from the specific triangle mesh at a fourth step. Random numbers are generated in order to calculate scattering of the implanted ion a fifth step. The point defect concentration is renewed into a renewed point defect concentration in the specific triangle mesh at a sixth step. The energy, the position, and the travelling direction is renewed in the implanted ion at a seventh step. The third to the seventh steps is repeated until the implanted ion stops in said polygonal substrate.