The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Feb. 26, 1998
Susumu Asada, Tokyo, JP;
Koichi Sawahata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An ion implantation process simulation device includes a Dual Pearson data extracting unit for generating a Dual Pearson data table from ion implantation profile data, a Dual Pearson data for interpolation obtaining unit for obtaining a parameter for use in the interpolation and extrapolation of a dose coefficient from the Dual Pearson data table, a dose coefficient interpolating/extrapolating unit for expressing an ion implantation profile by linear connection of two functions respectively representing an amorphous component and a channeling component, as well as using a dose-independent moment parameter and a coefficient of linear connection dependent on dose to interpolate and extrapolate a logarithmic value of a channeling component dose coefficient with respect to logarithmic values of all dose values, and a simulation result outputting unit for outputting a simulation result.
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