The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Mar. 26, 1998
Koichi Sawahata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An ion-implantation simulation method including (1) a step of generating orthogonal meshes for a multilayer-structure substrate, (2) a step of taking out a longitudinal strip, (3) a step of determining a function representing an impurity distribution in the longitudinal strip, (4) a step of integrating the function representing the impurity distribution in the range of each cell in the longitudinal strip, and dividing the integration value by the integration range to set the division result as the impurity concentration in the cell, (5) a step of taking out a transverse strip, (6) a step of determining a function of re-distributing the impurity distribution in the transverse strip in the transverse direction, and (7) a step of integrating the re-distributing function in the range of each cell in the transverse direction, dividing the integration result by the integration range and setting the division result as the impurity concentration in the cell.