Hsinchu, Taiwan

Ko-Cheng Liu

USPTO Granted Patents = 10 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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10 patents (USPTO):Explore Patents

Title: Innovations of Ko-Cheng Liu

Introduction

Ko-Cheng Liu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on advanced multigate devices, which are crucial for the development of modern electronic components.

Latest Patents

One of his latest patents is titled "Isolation for Multigate Devices." This exemplary device includes a stack of channel layers over a substrate extension, a gate, and an insulation layer. The stack of channel layers extends between a first epitaxial source/drain and a second epitaxial source/drain. The gate surrounds each channel layer of the stack of channel layers. The insulation layer is positioned over the substrate extension, with the gate situated between the bottommost channel layer of the stack and the insulation layer. Additionally, the insulation layer extends between the first and second epitaxial source/drain, which may include an undoped epitaxial layer. The design ensures that the top surface of the undoped epitaxial layer is strategically placed below the bottom surface of the bottommost channel layer and/or above the top surface of the insulation layer. The insulation layer may also wrap around the substrate extension and/or contain an air gap.

Another notable patent is "Multi-Gate Device Including Semiconductor Fin Between Dielectric Fins and Method of Fabrication Thereof." This method involves forming a semiconductor fin protruding from a substrate, followed by the creation of a cladding layer on the sidewalls of the semiconductor fin. First and second dielectric fins are then formed to sandwich the semiconductor fin, and the cladding layer is removed to create trenches. After this removal, a dummy gate structure is established over the semiconductor fin and in the trenches. The method further includes recessing the semiconductor fin near the dummy gate structure, forming an epitaxial feature on the recessed semiconductor fin, and replacing the dummy gate structure with a metal gate stack. The top surface of the recessed semiconductor fin in this region has a concave shape.

Career Highlights

Ko-Cheng Liu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the advancement of semiconductor technologies.

Collaborations

He has collaborated with notable coworkers, including Chang-Miao Liu and Ming-Lung Cheng

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