The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jan. 05, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ko-Cheng Liu, Hsinchu, TW;

Chang-Miao Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/832 (2025.01); H10D 62/121 (2025.01); H10D 84/0151 (2025.01); H10D 84/83 (2025.01); H10D 84/83138 (2025.01);
Abstract

A semiconductor device includes: a first transistor including a first gate structure; a second transistor including a second gate structure and arranged adjacent to the first transistor in a first direction; and a first isolation feature extending in a second direction. The second direction and the first direction are perpendicular. The first isolation feature is between the first gate structure and the second gate structure and in contact with the first gate structure and the second gate structure. The semiconductor structure further includes a first connection structure under the first isolation feature. The first connection structure connects the first gate structure to the second gate structure.


Find Patent Forward Citations

Loading…