The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jun. 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Abstract
The method includes receiving a semiconductor workpiece having active regions extending above a top surface of a semiconductor substrate, forming first dielectric features on first opposing sidewalls of the active regions across a first direction, forming second dielectric features extending between opposing sidewalls of the first dielectric features, and etching portions of the active region to form source/drain trenches. The source/drain trenches expose second opposing sidewalls of the active region. The method further includes recessing the first dielectric features and forming source/drain features in the source/drain trenches and on the exposed second opposing sidewalls of the active region. The source/drain features are partially formed on top surfaces of the first dielectric features.