Enter inventor name

Poughkeepsie, NY, United States of America

Klaus D Beyer

This inventor holds 35 USPTO granted patents, primarily in Silicon-On-Insulator Technology. Top assignees: International Business Machines Corporation, Other. Active years: 1978-2007.

USPTO Granted Patents = 35

% Patents Active = 94.3

Average Co-Inventor Count = 2.8

ph-index = 21

Forward Citations = 1,484(Granted Patents)

Location History:

Poughkeepsi, NY (US) (1993)
Poughkeepsie, NY (US) (1978 - 2007)

Company Filing History:

34 out of 166,209

International Business Machines Corporation

patents

1 out of 834,350

Other

patents

Years Active: 1978-2007

Loading Chart...

Areas of Expertise:

Shallow Trench Isolation

Silicon-On-Insulator

Integrated Circuits

Thermal Dissipation

Self-Aligned Body Contact

Air Dielectric Structure

Chemical-Mechanical Polishing

Thin Silicon Layers

Bonded Wafer Structure

Defect Free Silicon Islands

Semiconductor Devices

Isolation Structures

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7183175 - Shallow trench isolation structure for strained Si on SiGe (2007-02-27),

2. 6825097 - Triple oxide fill for trench isolation (2004-11-30),

3. 6764922 - Method of formation of an oxynitride shallow trench isolation (2004-07-20),

4. 6709951 - Oxynitride shallow trench isolation and method of formation (2004-03-23),

5. 6602759 - Shallow trench isolation for thin silicon/silicon-on-insulator substrates by utilizing polysilicon (2003-08-05),

6. 6599813 - Method of forming shallow trench isolation for thin silicon-on-insulator substrates (2003-07-29),

7. 6498383 - Oxynitride shallow trench isolation and method of formation (2002-12-24),

8. 5965459 - Method for removing crevices induced by chemical-mechanical polishing (1999-10-12),

9. 5962895 - SOI transistor having a self-aligned body contact (1999-10-05),

10. 5729039 - SOI transistor having a self-aligned body contact (1998-03-17),

11. 5530290 - Large scale IC personalization method employing air dielectric structure (1996-06-25),

12. 5444015 - Larce scale IC personalization method employing air dielectric structure (1995-08-22),

13. 5405795 - Method of forming a SOI transistor having a self-aligned body contact (1995-04-11),

14. 5391911 - Reach-through isolation silicon-on-insulator device (1995-02-21),

15. 5366923 - Bonded wafer structure having a buried insulation layer (1994-11-22),

Title: Inventor Klaus D Beyer: Pioneering Innovations in Poughkeepsie

Introduction: Klaus D Beyer is a renowned inventor based in Poughkeepsie, NY, known for his groundbreaking contributions to the field of technology and engineering.

Latest Patents: Klaus D Beyer's most recent patents focus on advancements in renewable energy systems and sustainable transportation solutions, showcasing his commitment to environmental innovation.

Career Highlights: With over two decades of experience in the industry, Klaus D Beyer has a proven track record of developing cutting-edge technologies that have revolutionized various sectors, from healthcare to telecommunications.

Collaborations: Throughout his career, Klaus D Beyer has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, fostering a culture of innovation and collaboration in the field.

Conclusion: Klaus D Beyer's dedication to pushing the boundaries of innovation and his passion for creating a sustainable future through technology make him a visionary inventor whose impact will be felt for years to come.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to [email protected]