The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Jul. 01, 2005
Steven John Koester, Ossining, NY (US);
Klaus Dietrich Beyer, Poughkeepsie, NY (US);
Michael John Hargrove, Clinton Corners, NY (US);
Kern Rim, Yorktown Heights, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
Steven John Koester, Ossining, NY (US);
Klaus Dietrich Beyer, Poughkeepsie, NY (US);
Michael John Hargrove, Clinton Corners, NY (US);
Kern Rim, Yorktown Heights, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench extending downward from the substrate top surface and penetrating into the SiGe based layer, forming a sidewall in the substrate. An epitaxial Si liner is selectively deposited onto the trench sidewall, and subsequently thermally oxidized. The trench is filled with a trench dielectric, which protrudes above the substrate top surface.