Kern-Huat Ang

Title: Innovations of Kern-Huat Ang

Introduction

Kern-Huat Ang is a notable inventor based in Johor, Malaysia. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing memory devices and improving manufacturing processes.

Latest Patents

One of his latest patents is a method for a multi-level interconnection memory device. This innovative method aims to prevent arcing during deep via plasma etching. The process involves forming a first patterned set of parallel conductive lines over a substrate and creating a plurality of semiconductor pillars on these lines. Each pillar consists of a first barrier layer, an antifuse layer, a diode, and a second barrier layer. An electric current flows through the diode when the antifuse layer breaks down. The method also includes depositing a dielectric between the semiconductor pillars and plasma etching a deep via recess through the dielectric and the underlying layer. An embodiment of this invention comprises a memory array device.

Career Highlights

Kern-Huat Ang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the semiconductor industry. His expertise and inventions have contributed to advancements in memory technology.

Collaborations

He has collaborated with notable coworkers such as Hsiu-Lan Kuo and Chien-Li Cheng, further enhancing the impact of his work in the field.

Conclusion

Kern-Huat Ang's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative methods continue to shape the future of memory devices.