The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Sep. 06, 2001
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1762 ;
U.S. Cl.
CPC ...
H01L 2/1762 ;
Abstract
A method for manufacturing shallow trench isolation (STI) structures in semiconductor device manufacturing including a method for minimizing divot formation in a shallow trench isolation process is disclosed. A trench liner oxide is deposited and then removed and recessions adjacent a trench are formed to be replaced by an etching resistant layer which covers the recessions to form a protective collar over the trench opening corners.
Cheng, Chien-Li. (2003). Method for protecting sti structures with low etching rate liners (U.S. Patent No. 6518148). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6518148
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