The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Nov. 28, 2006
Kern-huat Ang, Johor, MY;
Ling-sung Wang, Hsinchu, TW;
Kern-Huat Ang, Johor, MY;
Ling-Sung Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Semiconductor devices and fabrication methods thereof. A first dielectric layer with a first conductor line along a first direction is disposed on a semiconductor substrate, wherein the top surface of the first conductor line is lower than the top surface of the first dielectric layer. A second dielectric layer comprising an opening corresponding to the first diode element is disposed on the first dielectric layer. A semiconductor diode component comprises a first diode element disposed on the first conductor line, wherein the top surface of the first diode element is level with the top surface of the first dielectric layer; and a second diode element and a third diode element are filled in the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile