Enter inventor name

Average Co-Inventor Count = 1.9

ph-index = 13

Forward Citations = 498(Granted Patents)

Location History:

Manchester, MA (US) (1977 - 1988)
Lexington, MA (US) (1990 - 2012)
Gloucester, MA (US) (2011 - 2015)

Company Filing History:

11 out of 916

Varian Semiconductor Equipment Associates, Inc.

patents

6 out of 14

High Voltage Engineering Europa B.v.

patents

6 out of 32

Twin Creeks Technologies, Inc.

patents

4. 4 out of 5

General Ionex Corporation

High Voltage Engineeering Europa B.v.

patent

9. 1 out of 1

High Voltage Engineering Europa

patent

10. 10 out of 832,880

Other

patents

Years Active: 1977-2015

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Areas of Expertise:

Ion Beam Control

Ion Implantation

High-Transparency Electrodes

Radiation Reduction Techniques

Ribbon-Shaped Ion Beam

Beam Neutralization

Mass Spectroscopy

Ultra-Sensitive Detection

Precision Mass Selection

Accelerator Mass Spectrometry

Workpiece Cooling Systems

Electrode Terminations

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9029811 - Apparatus to control an ion beam (2015-05-12),

2. 8993980 - Dual stage scanner for ion beam control (2015-03-31),

3. 8884244 - Dual mode ion implanter (2014-11-11),

4. 8466431 - Techniques for improving extracted ion beam quality using high-transparency electrodes (2013-06-18),

5. 8309935 - End terminations for electrodes used in ion implantation systems (2012-11-13),

6. 8101488 - Hydrogen implantation with reduced radiation (2012-01-24),

7. 8089050 - Method and apparatus for modifying a ribbon-shaped ion beam (2012-01-03),

8. 8058626 - Method and apparatus for modifying a ribbon-shaped ion beam (2011-11-15),

9. 8044374 - Ion implantation apparatus (2011-10-25),

10. 7989784 - Ion implantation apparatus and a method (2011-08-02),

11. 7982197 - Ion implantation apparatus and a method for fluid cooling (2011-07-19),

12. 7897943 - Controlling the characteristics of implanter ion-beams (2011-03-01),

13. 7888660 - Controlling the characteristics of implanter ion-beams (2011-02-15),

14. 7829866 - Broad energy-range ribbon ion beam collimation using a variable-gradient dipole (2010-11-09),

15. 7807983 - Technique for reducing magnetic fields at an implant location (2010-10-05),

Sure! Here's the article about inventor Kenneth Harry Purser:

Title: The Innovator Extraordinaire: Kenneth Harry Purser

Introduction:

In the realm of ion beam control, one name shines bright - Kenneth Harry Purser. Hailing from Lexington, MA (US), Purser is renowned for his groundbreaking contributions to the field with an impressive portfolio of 44 patents.

Latest Patents:

Among his latest patents is the "Apparatus to Control an Ion Beam," a revolutionary device that optimizes ion beam trajectories for enhanced precision. Additionally, Purser's "Dual Stage Scanner for Ion Beam Control" showcases his ingenuity in creating advanced scanning technologies.

Career Highlights:

Throughout his illustrious career, Kenneth Harry Purser has made significant strides in the industry. Having worked at Varian Semiconductor Equipment Associates, Inc., he has played a pivotal role in shaping the future of ion beam technology.

Collaborations:

Purser's innovative spirit extends to his collaborations with esteemed colleagues such as Norman L Turner and Harald A Enge. Together, they have pushed the boundaries of ion beam control, paving the way for cutting-edge advancements in the field.

Conclusion:

In conclusion, Kenneth Harry Purser stands as a visionary inventor whose remarkable innovations continue to inspire and transform the world of ion beam technology. His relentless pursuit of excellence and dedication to progress solidify his legacy as a true pioneer in the realm of inventions.

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