The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Apr. 03, 2009
Frank Sinclair, Quincy, MA (US);
Svetlana B. Radovanov, Marblehead, MA (US);
Kenneth H. Purser, Lexington, MA (US);
Frank Sinclair, Quincy, MA (US);
Svetlana B. Radovanov, Marblehead, MA (US);
Kenneth H. Purser, Lexington, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.