IDiyas

For the Inventor, By the Inventor

Hyogo, Japan

Kenji Kusakabe

USPTO Granted Patents = 13


Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 195(Granted Patents)


Location History:

  • Itami, JP (1990)
  • Hyogo-ken, JP (1996)
  • Hyogo, JP (1989 - 1998)
  • Tokyo, JP (2006)

Company Filing History:

goldMedal13 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
silverMedal1 out of 51 
 
Mitsubishi Materials Silicon Corporation
 patents
bronzeMedal1 out of 1,530 
 
Mitsubishi Materials Corporation
 patents
where one patent can have more than one assignee

Years Active: 1989-2006

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13 patents (USPTO):
1. 7081863 - Reflector antenna (2006-07-25),
2. 7009574 - Plural-reflector antenna system (2006-03-07),
3. 5721145 - Method of making a semiconductor substrate having gettering effect (1998-02-24),
4. 5539245 - Semiconductor substrate having a gettering layer (1996-07-23),
5. 5516706 - Method of manufacturing semiconductor device with a gettering sink (1996-05-14),
6. 5419786 - Semiconductor substrate for bipolar element (1995-05-30),
7. 5381032 - Semiconductor device having a gate electrode of polycrystal layer and a (1995-01-10),
8. 5374842 - Semiconductor device with a gettering sink material layer (1994-12-20),
9. 5327007 - Semiconductor substrate having a gettering layer (1994-07-05),
10. 5221630 - Method of manufacturing semiconductor device having a two layered (1993-06-22),
11. 5177569 - Semiconductor device having a two layered structure gate electrode (1993-01-05),
12. 4964969 - Semiconductor production apparatus (1990-10-23),
13. 4876224 - Silicon wafer for a semiconductor substrate and the method for making (1989-10-24),
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