The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 1989
Filed:
Jun. 30, 1988
Applicant:
Inventor:
Kenji Kusakabe, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437228 ; 437233 ; 437 12 ; 148D / ;
Abstract
A silicon wafer for a semiconductor substrate comprises a flat wafer body, with a polycrystalline silicon layer formed only on the rear surface of said wafer body. The silicon wafer is manufactured by the steps of forming a polycrystalline silicon layer on the entire surface of the silicon wafer body, etching and removing the portion of the polycrystalline silicon layer which is formed on the side surface of silicon wafer body, and polishing and removing the polycrystalline silicon layer on the front surface of the silicon wafer body.