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For the Inventor, By the Inventor

Tokyo, Japan

Kenji Anzai

USPTO Granted Patents = 12

Average Co-Inventor Count = 1.7

ph-index = 6

Forward Citations = 411(Granted Patents)


Location History:

  • Tokyo, JP (1993 - 1995)
  • Sagamihara, JP (1994 - 1997)

Company Filing History:

goldMedal12 out of 3,576 
 
Nippon Steel Corporation
 patents

Years Active: 1993-1997

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12 patents (USPTO):Explore Patents
1. 5596527 - Electrically alterable n-bit per cell non-volatile memory with reference (1997-01-21),
2. 5468979 - Semiconductor device having trench type capacitors formed completely (1995-11-21),
3. 5459685 - Semiconductor memory device having memory cells with enhanced capacitor (1995-10-17),
4. 5424978 - Non-volatile semiconductor memory cell capable of storing more than two (1995-06-13),
5. 5418743 - Method of writing into non-volatile semiconductor memory (1995-05-23),
6. 5414277 - Thin film transistor which prevents generation of hot carriers (1995-05-09),
7. 5410503 - Semiconductor memory device having memory cells including transistors (1995-04-25),
8. 5356738 - Reticle comprising phase shifter with a tapered edge (1994-10-18),
9. 5335196 - Semiconductor memory device having memory cells formed of one transistor (1994-08-02),
10. 5292679 - Process for producing a semiconductor memory device having memory cells (1994-03-08),
11. 5290723 - Method of manufacturing a nonvolatile semiconductor memory (1994-03-01),
12. 5233207 - MOS semiconductor device formed on insulator (1993-08-03),

Title: Kenji Anzai: Innovator in Semiconductor Technology

Introduction

Kenji Anzai is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Anzai has made remarkable advancements in non-volatile memory and semiconductor devices.

Latest Patents

One of Anzai's latest patents is for an electrically alterable n-bit per cell non-volatile memory. This invention features a memory cell array that includes multiple memory cells, each with a transistor set to different threshold voltages. It also incorporates a reference cell array with reference cells set to varying threshold voltages, along with selection and comparing circuitry to output data based on memory current comparisons. Another notable patent involves a semiconductor device with trench-type capacitors formed completely. This device consists of a silicon substrate, an insulator film, a transistor on the insulator film, and a capacitor formed in a trench within the insulator film.

Career Highlights

Kenji Anzai is currently employed at Nippon Steel Corporation, where he continues to innovate in the field of semiconductor technology. His work has significantly impacted the development of advanced memory solutions and semiconductor devices.

Collaborations

Anzai has collaborated with notable colleagues, including Toshio Wada and Shoichi Iwasa, contributing to various projects and advancements in their field.

Conclusion

Kenji Anzai's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the future of non-volatile memory and semiconductor devices.

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