The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1993
Filed:
Jun. 24, 1991
Kenji Anzai, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
An MOS type semiconductor device having an SOI structure comprises an insulating film formed on a semiconductor substrate, a conductive layer formed on the insulating film serving as a gate electrode, a dielectric film covering upper and side surfaces of the conductive and the insulating film and a single semiconductor layer formed on the dielectric film, the semiconductor layer including a first part formed over an upper surface of the conductive layer, a second part formed on a side surface of the conductive layer and a third part formed over a part of the dielectric film covering directly the insulating film so that the first and third parts serve as a source and a drain or vice versa and the second part serves as a channel.