The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1995
Filed:
Dec. 06, 1993
Kenji Anzai, Sagamihara, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A semiconductor memory device having memory cells including a transistor and a trench type capacitor which are formed on a semiconductor substrate to cooperate with each other to store information. The device includes a trench having a bottom made of a first insulator disposed on the semiconductor substrate and a sidewall made of an epitaxial semiconductor layer which is epitaxially grown on the semiconductor substrate in a substantially vertical direction around the first insulator. The capacitor comprises an impurity diffused layer formed on the sidewall of the trench, a second insulator layer formed over thee impurity diffused layer, and a conductive layer opposite of the impurity diffused layer via the second insulator layer, with the transistor formed on the epitaxial semiconductor layer.