The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Mar. 29, 1994
Applicant:
Inventors:
Kenji Anzai, Tokyo, JP;
Toshio Wada, Tokyo, JP;
Assignee:
Nippon Steel Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ; H01L / ;
U.S. Cl.
CPC ...
365149 ; 257300 ; 257306 ;
Abstract
A semiconductor memory device includes a dielectric layer formed on a conductive thin film layer constituting a shield electrode for effecting element separation in a field area, the dielectric layer connected to a dielectric layer of a capacitor with a lower electrode having part thereof opposite to part of the shield electrode through the dielectric layer, and has an increase in electrode area of a memory cell to be able to attain the high level of integration.