Ke Zhang

USPTO Granted Patents = 20 (Patent Applications = 13)

CIPO Patents = 8 (Patent Applications = 13)

EPO Patents = 4 (Patent Applications = 9)

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 11(Granted Patents)

Company Filing History:

10 out of 4,519

Sandisk Technologies Inc.

patents

5 out of 5,310

Western Digital Technologies, Inc.

Verisilicon Microelectronics (shanghai) Co., Ltd.

patents

5. 2 out of 11

Verisilicon Microelectronics (nanjing) Co., Ltd.

patents

6. 1 out of 1

Honeywell (china) Co., Ltd.

patent

7. 1 out of 7

Verisilicon Microelectronics (chengdu) Co., Ltd.

patents

8. 1 out of 37

Verisilicon Holdings Company Ltd.

patents

where one patent can have more than one assignee

Years Active: 2012-2025

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20 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12354704 - Active current consumption save mode for non-volatile memory using fast programming (2025-07-08),

2. 12353884 - Cross-linking method and apparatus, electronic device and storage medium (2025-07-08),

3. 12283324 - Array dependent voltage compensation in a memory device (2025-04-21),

4. 12224011 - Non-volatile memory with concurrent sub-block programming (2025-02-11),

5. 12190969 - Plane level dedicated starting program voltage to reduce program time for multi-plane concurrent program operation (2025-01-07),

6. 12112814 - Open block boundary group programming for non-volatile memory (2024-10-08),

7. 12057172 - Hybrid multi-block erase technique to improve erase speed in a memory device (2024-08-06),

8. 12046304 - Programming techniques to improve programming time and reduce programming errors (2024-07-23),

9. 11978507 - Non-volatile memory with intentional overprogramming to improve short term data retention issue (2024-05-07),

10. 11972817 - State look ahead quick pass write algorithm to tighten ongoing natural threshold voltage of upcoming states for program time reduction (2024-04-30),

11. 11972815 - Post-write read techniques to improve programming reliability in a memory device (2024-04-30),

12. 11967383 - Non-volatile memory with enhanced program operation for last state on slow plane (2024-04-23),

13. 11908524 - Apparatus and methods for programming memory cells (2024-02-20),

14. 11894077 - Self-diagnostic smart verify algorithm in user mode to prevent unreliable acquired smart verify program voltage (2024-02-06),

15. 11657883 - Isolating problematic memory planes to avoid neighbor plan disturb (2023-05-23),

Title: Innovations by Inventor Ke Zhang in Non-Volatile Memory Technology

Introduction

Ke Zhang is a prominent inventor based in Shanghai, China, known for his significant contributions to the field of non-volatile memory technology. With a remarkable portfolio of 17 patents, Zhang's work demonstrates a commitment to advancing memory systems that enhance data storage efficiency and speed.

Latest Patents

Zhang's latest patents include groundbreaking innovations in non-volatile memory systems. One of his notable patents focuses on a non-volatile memory system that features a control circuit capable of concurrently programming memory cells connected to different word lines across various sub-blocks, blocks, and planes within a die. This innovation aims to improve the efficiency of memory programming operations.

Another significant patent involves a memory apparatus that implements a plane-level dedicated starting program voltage, effectively reducing program time during multi-plane concurrent programming operations. This invention includes an advanced control means that programs memory cells across multiple planes, acquiring optimal verification programming voltages for each plane. This clever design allows for concurrent programming of memory cells, thereby enhancing overall performance.

Career Highlights

Throughout his career, Ke Zhang has worked with leading companies such as Sandisk Technologies Inc. and Western Digital Technologies, Inc. His experiences in these organizations have played a crucial role in shaping his innovative capabilities and understanding of memory technology.

Collaborations

Zhang has collaborated with talented individuals in the field, including Liang Li, contributing to the advancement of memory technology through shared expertise and creativity. These collaborations have helped foster an environment of innovation and progress.

Conclusion

Ke Zhang stands out as a visionary inventor, continuously pushing the boundaries of non-volatile memory technology. His contributions, marked by a portfolio of 17 patents, highlight his dedication to enhancing data storage solutions and improving the efficiency of memory systems. As the technology landscape evolves, Zhang's work remains pivotal in shaping the future of memory innovations.

This text is generated by artificial intelligence and may not be accurate.