The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jul. 20, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Ke Zhang, Shanghai, CN;

Liang Li, Shanghai, CN;

Jiahui Yuan, Fremont, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/4076 (2006.01); G11C 11/408 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4076 (2013.01); G11C 11/4085 (2013.01);
Abstract

Method for performing a memory operation with respect to a memory structure having 'N'-number of planes, each plane comprising “M”-number of blocks and “X”-number of word lines arranged in a serial order, and electrically connected with each plane are: a voltage bias source, an electronic switching component, and row decoder, the method comprising: with respect to each plane, selecting a block and a word line for application of the operation, wherein the operation has not been applied to the selected block and word line, the selected block of one plane is located in a different block group from the selected block of another plane, and the selected word line of one plane is in a different position within the serial order from a position of the selected word line of another plane; and using the voltage bias source, concurrently applying the operation to the selected blocks and selected word lines.


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