Hachioji, Japan

Kazuyuki Nagatsuma

This inventor holds 12 USPTO granted patents. Top assignees: Hitachi, Ltd., Hitachi Cable, Inc., Hitachi, Ltd. & Nippon Hoso Kyokai. Active years: 1981-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuyuki Nagatsuma. Retrieved from https://idiyas.com/inventor/kazuyuki-nagatsuma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.1

ph-index = 7

Forward Citations = 147(Granted Patents)


Company Filing History:


Years Active: 1981-1996

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12 patents (USPTO):Explore Patents

Title: Kazuyuki Nagatsuma: Innovator in Imaging Technology

Introduction

Kazuyuki Nagatsuma is a prominent inventor based in Hachioji, Japan. He has made significant contributions to the field of imaging technology, holding a total of 12 patents. His work focuses on developing advanced imaging apparatuses and semiconductor photodetectors.

Latest Patents

One of his latest patents is an imaging apparatus and operation method that features a photoconductive target with a transparent electrode layer and a photoconductive layer on a transparent substrate. This apparatus is designed to work with a group of integrated electron beam emitters equipped with gate electrodes. By activating a number of these electron emitters, electron beams are applied to the photoconductive target. The activated electron beam emitters are temporally switched by an electron emitter selector circuit and a gate selector circuit. This process allows for the reading of signal charge generated and stored in the photoconductive layer, ultimately producing a time-series electric signal that corresponds to the spatial distribution of incident light. This innovation provides a thin imaging apparatus suitable for larger areas. Another notable patent involves fabricating a semiconductor photodetector by annealing to smooth the PN junction. This semiconductor photodetector consists of a pn junction formed in a semiconductor substrate, along with a pair of electrodes that apply a reverse bias to the junction. The enhanced diffusion process metamorphoses at least part of the junction plane, resulting in a smooth transition from the outer peripheral portion to the central portion of the pn junction.

Career Highlights

Kazuyuki Nagatsuma has worked with notable companies such as Hitachi, Ltd. and Hitachi Cable, Inc. His experience in these organizations has contributed to his expertise in imaging technology and semiconductor devices.

Collaborations

Throughout his career, Nagatsuma has collaborated with esteemed colleagues, including Hiroyoshi Matsumura and Yukio Ito. These partnerships have fostered innovation and advancement in their respective fields.

Conclusion

Kazuyuki Nagatsuma's contributions to imaging technology and semiconductor photodetectors highlight his role as a significant inventor. His innovative patents and collaborations reflect his commitment to advancing technology in these areas.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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