The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1992
Filed:
Feb. 02, 1990
Applicant:
Inventors:
Kazuhiro Ito, Tokyo, JP;
Kazuyuki Nagatsuma, Hachioji, JP;
Hiroshi Matsuda, Kanagawa, JP;
Ichiro Fujiwara, Kawasaki, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-5 ; 437154 ; 437167 ; 437956 ; 437987 ; 148D / ;
Abstract
A semiconductor photodetector is disclosed which comprises a pn junction formed in a semiconductor substrate and a pair of electrodes for applying a reverse bias to the pn junction, in which at least a part of the junction plane of the pn junction has been metamorphosed by enhanced diffusion. Hence the pn junction from an outer peripheral portion and a central portion is made smooth.
Ito, Kazuhiro. (1992). Fabricating a semiconductor photodetector by annealing to smooth the pn (U.S. Patent No. 5098851). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5098851
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile