Kazunari Hatade

USPTO Granted Patents = 17 (Patent Applications = 1)

EPO Patents = 4 (Patent Applications = 6)

Average Co-Inventor Count = 1.5

ph-index = 4

Forward Citations = 47(Granted Patents)

Location History:

Chiyoda-ku, JP (2010 - 2011)
Tokyo, JP (2001 - 2014)

Company Filing History:

10 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

6 out of 15,863

Mitsubishi Electric Corporation

patents

1 out of 832,718

Other

patents

Years Active: 2001-2014

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8692323 - Semiconductor device with peripheral base region connected to main electrode (2014-04-08),

2. 8421157 - Semiconductor device (2013-04-16),

3. 8183631 - Semiconductor device (2012-05-22),

4. 8008746 - Semiconductor device (2011-08-30),

5. 7902634 - Semiconductor device (2011-03-08),

6. 7829955 - Semiconductor device (2010-11-09),

7. 7777279 - Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage (2010-08-17),

8. 7745906 - Semiconductor device having spaced unit regions and heavily doped semiconductor layer (2010-06-29),

9. 7652350 - Semiconductor device (2010-01-26),

10. 7545005 - Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage (2009-06-09),

11. 7408228 - Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage (2008-08-05),

12. 7190034 - Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage (2007-03-13),

13. 7180106 - Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance (2007-02-20),

14. 7122875 - Semiconductor device (2006-10-17),

15. 6979850 - Semiconductor device capable of avoiding latchup breakdown resulting from negative varation of floating offset voltage (2005-12-27),

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1 patent pending:

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4 patents (EPO):

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6 patents pending (EPO):

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