The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Nov. 30, 2004
Kazunari Hatade, Tokyo, JP;
Kazunari Hatade, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A p well serving as a channel region of a MOSFET is formed on one side of an nlayer and an ndrain region is formed on the other side. Above the nlayer, a plurality of first floating field plates are formed with a first insulating film interposed therebetween. A plurality of second floating field plates are formed thereon with a second insulating film interposed therebetween. Assuming that the thickness of the first insulating film is 'a' and the distance between the first floating field plates and the second floating field plates in a direction of thickness of the second insulating film is 'b', a relation a>b is held.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile