The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8692323 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 08, 2014

Filed:

Nov. 30, 2011
Applicants:

Kazunari Hatade, Tokyo, JP;

Yoshiaki Hisamoto, Tokyo, JP;

Inventors:

Kazunari Hatade, Tokyo, JP;

Yoshiaki Hisamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device has a semiconductor substrate having an upper main surface and a lower main surface. The semiconductor substrate includes a drain layer, a main base region, an underpad base region and a source region. The semiconductor device includes a first main electrode connected to the main base regions and the source region and not connected to the underpad base region, a gate electrode opposed to a channel region in the main base region interposed between the drain layer and the source region with a gate insulating film provided therebetween, a conductive gate pad opposed to an exposed surface of the underpad base region in the upper main surface with an insulating layer interposed therebetween and the conductive gate pad is connected to the gate electrode, and a second main electrode connected to the lower main surface.


Find Patent Forward Citations

Hatade, Kazunari. (2014). Semiconductor device with peripheral base region connected to main electrode (U.S. Patent No. 8692323). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8692323

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