The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Apr. 04, 2001
Kazunari Hatade, Tokyo, JP;
Yoshiaki Hisamoto, Tokyo, JP;
Kazunari Hatade, Tokyo, JP;
Yoshiaki Hisamoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device has an enhanced di/dt tolerance and a dv/dt tolerance without increasing an ON resistance. An underpad base region is provided on a region in an upper main surface of a semiconductor substrate which is provided under a gate pad, and the underpad base region is not connected to a source electrode and is not coupled to a main base region connected to the source electrode. The underpad base region is brought into a floating state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile