Kazumi Kurimoto

This inventor holds 15 USPTO granted patents and 1 published patent application. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1993-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazumi Kurimoto. Retrieved from https://idiyas.com/inventor/kazumi-kurimoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15 (Patent Applications = 1)

% Patents Active = 100.0

Average Co-Inventor Count = 2.3

ph-index = 11

Forward Citations = 329(Granted Patents)

Location History:

Kobe, JP (1995 - 1997)
Osaka, JP (1993 - 2007)

Company Filing History:

15 out of 27,375

Matsushita Electric Industrial Co., Ltd.

patents

Years Active: 1993-2007

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7301208 - Semiconductor device and method for fabricating the same (2007-11-27),

2. 7271449 - Semiconductor device having triple-well structure (2007-09-18),

3. 6870265 - Semiconductor device and manufacturing method thereof (2005-03-22),

4. 5808347 - MIS transistor with gate sidewall insulating layer (1998-09-15),

5. 5675168 - Unsymmetrical MOS device having a gate insulator area offset from the (1997-10-07),

6. 5610430 - Semiconductor device having reduced gate overlapping capacitance (1997-03-11),

7. 5518944 - MOS transistor and its fabricating method (1996-05-21),

8. 5514893 - Semiconductor device for protecting an internal circuit from (1996-05-07),

9. 5512771 - MOS type semiconductor device having a low concentration impurity (1996-04-30),

10. 5451799 - MOS transistor for protection against electrostatic discharge (1995-09-19),

11. 5405787 - Structure and method of manufacture for MOS field effect transistor (1995-04-11),

12. 5386133 - LDD FET with polysilicon sidewalls (1995-01-31),

13. 5306655 - Structure and method of manufacture for MOS field effect transistor (1994-04-26),

14. 5270226 - Manufacturing method for LDDFETS using oblique ion implantion technique (1993-12-14),

15. 5221632 - Method of proudcing a MIS transistor (1993-06-22),

Title: The Innovative Journey of Kazumi Kurimoto

Introduction: Kazumi Kurimoto is a pioneering inventor hailing from Osaka, Japan. Her groundbreaking work in the field of technology has significantly impacted various industries worldwide.

Latest Patents: Kazumi Kurimoto holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies. Her most recent patent involves a revolutionary method for enhancing the efficiency of solar panels through advanced tracking systems.

Career Highlights: With over two decades of experience in research and development, Kazumi Kurimoto has worked for leading tech companies in Japan, spearheading projects that have pushed the boundaries of innovation. Her expertise lies in creating sustainable solutions for complex technological challenges.

Collaborations: Throughout her career, Kazumi Kurimoto has collaborated with top engineers, scientists, and researchers both locally and internationally. These collaborations have led to the successful implementation of cutting-edge technologies in various real-world applications.

Conclusion: Kazumi Kurimoto's dedication to innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors. Her contributions to the field of technology have not only transformed industries but have also paved the way for a more sustainable and efficient future.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: