The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1995
Filed:
Dec. 22, 1993
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257174 ; 257240 ; 257241 ; 257345 ; 257355 ; 257546 ; 257653 ; 257773 ; 257906 ;
Abstract
A MOS transistor for protection against electrostatic discharge includes a semiconductor substrate; an island including a source region and a drain region provided in the semiconductor substrate; an isolation region provided in the semiconductor substrate so as to surround the island; a gate insulating layer provided on the semiconductor substrate; a gate electrode provided on the gate insulating layer; and a distributing device for distributing an electric current generated by an electrostatic voltage applied to the drain region into the drain region.