The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 1997
Filed:
Jun. 26, 1995
Kyoji Yamashita, Osaka, JP;
Shinji Odanaka, Hirakata, JP;
Kazumi Kurimoto, Kobe, JP;
Hiroyuki Umimoto, Takarazuka, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
The semiconductor device of the invention includes: a semiconductor substrate of a first conductivity type; a gate insulating film formed on a selected region on a main surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; and a source region and a drain region which are formed of high-concentration impurity diffusion layers of a second conductivity type in the semiconductor substrate. In the semiconductor device, a thickness of both end portions of the gate insulating film is larger than a thickness of a center portion of the gate insulating film, and each of the source region and the drain region includes a first portion located under both end-portions of the gate insulating film and a second portion having a thickness equal to or larger than a thickness of the first portion. An impurity concentration in the first portion is substantially equal to an impurity concentration in the second portion.