The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Sep. 10, 2002
Kazumi Kurimoto, Osaka, JP;
Yoshiaki Kato, Hyogo, JP;
Kazumi Kurimoto, Osaka, JP;
Yoshiaki Kato, Hyogo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device, after the deposition of an interlayer insulating film is deposited on a substrate on which an element and wiring of a lower layer are provided, a via hole reaching to the wiring and an annular groove reaching to an annular pad are formed in the interlayer insulating film, in the internal element region and in the chip area outer periphery region, respectively. Next, by etching using a photoresist pattern formed on the inetrlayer insulating film as a mask, a larger groove for use in wiring than the via hole is formed in the internal element region. At this time, a portion of the annular groove, positioned in the side portion of the chip area outer periphery region, is filled with a portion of the photoresist pattern, thereby decreasing the amount of Cu and the like released from the bottom of the annular groove.