The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
May. 02, 2005
Takato Handa, Shiga, JP;
Kazumi Kurimoto, Osaka, JP;
Takato Handa, Shiga, JP;
Kazumi Kurimoto, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A first doped layer of a conductivity type opposite to that of source/drain regions is formed in a semiconductor substrate under a gate electrode. A second doped layer of the conductivity type opposite to that of the source/drain regions is formed in the semiconductor substrate below the first doped layer. The first doped layer has a first peak in dopant concentration distribution in the depth direction. The first peak is located at a position shallower than the junction depth of the source/drain regions. The second doped layer has a second peak in dopant concentration distribution in the depth direction. The second peak is located at a position deeper than the first peak and shallower than the junction depth of the source/drain regions. The dopant concentration at the first peak is higher than that at the second peak.