Aira, Japan

Kazuhiro Ishikawa


 

Average Co-Inventor Count = 3.1

ph-index = 1


Location History:

  • Aira, JP (2016)
  • Shiga, JP (2022 - 2024)

Company Filing History:


Years Active: 2016-2025

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8 patents (USPTO):Explore Patents

Title: Kazuhiro Ishikawa: Innovator in Plasma Processing Technology

Introduction

Kazuhiro Ishikawa is a prominent inventor based in Aira, Japan. He has made significant contributions to the field of plasma processing technology, holding a total of 8 patents. His work focuses on enhancing the efficiency and effectiveness of plasma processing devices.

Latest Patents

Ishikawa's latest patents include innovative designs for members used in plasma processing devices. One notable patent describes a member that consists of a base material and a film containing yttrium oxide as a main component. This film features a closed pore area occupancy of 0.2 area % or less, and a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film is 0.25° or less. Another patent outlines a member that includes a film of a rare earth element oxide on at least part of the base material, with a coefficient of variation of thickness of the film being 0.04 or less. These advancements contribute to the development of more reliable plasma processing devices.

Career Highlights

Kazuhiro Ishikawa is currently employed at Kyocera Corporation, where he continues to innovate in the field of plasma processing. His work has been instrumental in advancing the technology used in various applications, making him a key figure in his industry.

Collaborations

Ishikawa has collaborated with notable coworkers such as Takashi Hino and Shuichi Saito. Their combined expertise has led to significant advancements in the technologies they work on.

Conclusion

Kazuhiro Ishikawa's contributions to plasma processing technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of this important field.

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