The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Apr. 03, 2019
Applicant:

Kyocera Corporation, Kyoto, JP;

Inventors:

Kazuhiro Ishikawa, Shiga, JP;

Takashi Hino, Yokohama, JP;

Shuichi Saito, Yokohama, JP;

Assignee:

KYOCERA CORPORATION, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/08 (2006.01); B32B 18/00 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); C04B 41/00 (2006.01); C04B 41/50 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32477 (2013.01); B32B 18/00 (2013.01); C04B 41/009 (2013.01); C04B 41/5045 (2013.01); C04B 41/5055 (2013.01); C23C 14/083 (2013.01); C23C 16/45536 (2013.01); H01L 21/02252 (2013.01); H01L 21/3065 (2013.01);
Abstract

A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.


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