Katsushi Hashio

Title: Innovations of Katsushi Hashio in Indium Phosphide Technology

Introduction

Katsushi Hashio is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of indium phosphide materials. With a total of 12 patents to his name, Hashio's work has advanced the capabilities of electronic and optoelectronic devices.

Latest Patents

Hashio's latest patents focus on the creation of indium phosphide single-crystal bodies and substrates. One of his notable inventions describes an indium phosphide single-crystal body that maintains an oxygen concentration of less than 1×10 atoms·cm. This body features a cylindrical shape with a diameter ranging from 100 mm to 150 mm. Additionally, he has developed an indium phosphide single-crystal substrate with similar oxygen concentration specifications and diameter requirements. Another patent details an indium phosphide single crystal that exhibits a compressive strain in the tangential direction of its outer circumferential portion, enhancing its structural integrity.

Career Highlights

Katsushi Hashio is currently employed at Sumitomo Electric Industries, Limited, where he continues to innovate in the semiconductor sector. His work has not only contributed to the advancement of indium phosphide technology but has also positioned his company as a leader in this field.

Collaborations

Throughout his career, Hashio has collaborated with esteemed colleagues such as Shin-ichi Sawada and Masami Tatsumi. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Katsushi Hashio's contributions to indium phosphide technology exemplify the impact of dedicated inventors in the semiconductor industry. His innovative patents and collaborations continue to shape the future of electronic materials.