The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Feb. 17, 2023
Sumitomo Electric Industries, Ltd., Osaka, JP;
Koichiro Aoyama, Hyogo, JP;
Katsushi Hashio, Hyogo, JP;
Tatsuya Moriwake, Hyogo, JP;
Masanori Morishita, Hyogo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The semi-insulating gallium arsenide single-crystal substrate has a circular-shaped first main surface, in which a diameter of the semi-insulating gallium arsenide single-crystal substrate is 95 mm or more and 205 mm or less, a coefficient of light absorption of the semi-insulating gallium arsenide single-crystal substrate, with respect to near-infrared light at a wavelength of 940 nm, is 1.5 cmor less, the number of etch pits per square centimeter, formed on the first main surface, in an etching test with immersion of the semi-insulating gallium arsenide single-crystal substrate in molten potassium hydroxide at 500° C. for 10 minutes is 300 or less, and a specific resistance of the semi-insulating gallium arsenide single-crystal substrate, as measured at 25° C. according to the Van der Pauw method, is 1.0×10Ω·cm or more.