Hyogo, Japan

Koichiro Aoyama

This inventor holds 2 USPTO granted patents. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koichiro Aoyama. Retrieved from https://idiyas.com/inventor/koichiro-aoyama-tm6zt2r6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 4.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Koichiro Aoyama: Innovator in Gallium Arsenide Technology

Introduction

Koichiro Aoyama is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium arsenide substrates. His work has implications for various applications in electronics and optoelectronics.

Latest Patents

Aoyama holds a patent for a gallium arsenide single crystal substrate and the method of producing it. This substrate features a main surface with a circular shape, where the average dislocation density ranges from 5 cm or more to 100 cm or less. The substrate is designed to have a high quality, with a ratio of squares free from dislocations being between 97.0% and 99.5%. Additionally, the substrate includes silicon, with a concentration between 1.0×10 cm or more and 5.0×10 cm or less.

Career Highlights

Koichiro Aoyama is associated with Sumitomo Electric Industries, Limited, a leading company in the field of electrical and electronic components. His work at this company has allowed him to focus on innovative solutions in semiconductor materials.

Collaborations

Aoyama collaborates with Yuichiro Miyazaki, contributing to advancements in their shared field of expertise. Their partnership enhances the research and development efforts within their organization.

Conclusion

Koichiro Aoyama's contributions to gallium arsenide technology exemplify the importance of innovation in the semiconductor industry. His patent and ongoing work continue to influence advancements in electronic materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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