The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Dec. 27, 2022
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Yuichiro Miyazaki, Hyogo, JP;

Koichiro Aoyama, Hyogo, JP;

Tatsuya Moriwake, Hyogo, JP;

Katsushi Hashio, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/02 (2006.01); C30B 11/00 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 29/403 (2013.01); B32B 3/02 (2013.01); C30B 11/002 (2013.01);
Abstract

A gallium arsenide single crystal substrate is a gallium arsenide single crystal substrate having a main surface having a circular shape, wherein an average value of a dislocation density of the main surface is 5 cmor more and 100 cmor less, and in an imaginary grid formed by laying out squares each having each side of 2 mm on the main surface such that a largest number of the squares are arranged side by side without overlapping with each other, a ratio of the number of squares in which no dislocation is present to a total number of the squares constituting the grid is 97.0% or more and 99.5% or less, the gallium arsenide single crystal substrate including silicon, wherein a concentration of the silicon is 1.0×10cmor more and 5.0×10cmor less.


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