The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
May. 05, 2003
Tomohiro Kawase, Itami, JP;
Katsushi Hashio, Itami, JP;
Shin-ichi Sawada, Itami, JP;
Masami Tatsumi, Itami, JP;
Tomohiro Kawase, Itami, JP;
Katsushi Hashio, Itami, JP;
Shin-ichi Sawada, Itami, JP;
Masami Tatsumi, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×10cm. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive boron concentration of not more than 1×10cmand a carbon concentration of 0.5×10cmto 1.5×10cmwith a uniform concentration throughout the crystal. Such a crystal can form a very thin wafer with a low dislocation density. A special method and apparatus for producing such a crystal is also disclosed.