Company Filing History:
7 out of 993 
1 out of 832,843 Years Active: 2005-2011
Title: Karen Billington: Innovator in Copper Diffusion Barrier Films
Introduction
Karen Billington is a prominent inventor based in Beaverton, OR (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of copper diffusion barrier films. With a total of 8 patents to her name, her work has been instrumental in advancing materials used in electronic devices.
Latest Patents
Among her latest innovations are the low-K SiC copper diffusion barrier films. These films are designed to have low dielectric constants, making them suitable for various copper/inter-metal dielectric integration schemes. The films consist of one or more layers of silicon carbide, with at least one layer containing a composition of at least 40% carbon. This high carbon-content layer is crucial as it reduces the effective dielectric constant compared to conventional barrier materials. Another notable patent is the low-k boron-doped SiC copper diffusion barrier film. This invention maintains a stable dielectric constant of less than 4.5, even in the presence of atmospheric moisture, making it highly valuable for semiconductor devices.
Career Highlights
Throughout her career, Karen has worked with notable companies, including Novellus Systems Incorporated. Her expertise in semiconductor materials has positioned her as a key player in the industry.
Collaborations
Karen has collaborated with talented individuals such as Yongsik Yu and Michael Carris, contributing to the advancement of her innovative projects.
Conclusion
Karen Billington's contributions to the field of semiconductor technology through her patents and collaborations highlight her role as a leading inventor. Her work continues to influence the development of advanced materials in the electronics industry.