The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Sep. 24, 2003
Yongsik Yu, Lake Oswego, OR (US);
Karen Billington, Beaverton, OR (US);
Robert Hepburn, Tualatin, OR (US);
Michael Carris, Tualatin, OR (US);
William Crew, Portland, OR (US);
Yongsik Yu, Lake Oswego, OR (US);
Karen Billington, Beaverton, OR (US);
Robert Hepburn, Tualatin, OR (US);
Michael Carris, Tualatin, OR (US);
William Crew, Portland, OR (US);
Other;
Abstract
The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.