The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Mar. 08, 2006
Yongsik Yu, Lake Oswego, OR (US);
Atul Gupta, Fremont, CA (US);
Karen Billington, Beaverton, OR (US);
Michael Carris, Hillsboro, OR (US);
William Crew, Portland, OR (US);
Thomas W. Mountsier, San Jose, CA (US);
Yongsik Yu, Lake Oswego, OR (US);
Atul Gupta, Fremont, CA (US);
Karen Billington, Beaverton, OR (US);
Michael Carris, Hillsboro, OR (US);
William Crew, Portland, OR (US);
Thomas W. Mountsier, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.