Atul Gupta

Title: Atul Gupta: Innovator in Semiconductor Technology

Introduction

Atul Gupta is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on developing advanced materials that enhance the performance and reliability of semiconductor devices.

Latest Patents

Gupta's latest patents include innovative solutions such as low-k b-doped SiC copper diffusion barrier films. This invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide. It is suitable for use in semiconductor devices and methods for fabricating such films. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture. Another notable patent is for boron-doped SiC copper diffusion barrier films. These films have a boron-doped silicon carbide layer with at least 25% boron by atomic weight. They offer advantages for semiconductor device integration schemes, including an etch selectivity to carbon-doped oxide of at least 10 to 1 and an adhesion energy of at least 20 J/m. These films are suitable for a wide range of VLSI and ULSI structures and devices.

Career Highlights

Atul Gupta is currently associated with Novellus Systems Incorporated, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing materials that improve device performance and reliability.

Collaborations

Gupta has collaborated with notable colleagues such as Yongsik Yu and Karen Billington, contributing to various projects that advance semiconductor technology.

Conclusion

Atul Gupta's innovative work in semiconductor technology, particularly in the development of copper diffusion barrier films, showcases his commitment to enhancing device performance. His contributions are vital to the ongoing evolution of the semiconductor industry.