The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Mar. 13, 2002
Jengyi Yu, San Jose, CA (US);
Ka Shun Wong, San Jose, CA (US);
Sanjeev Jain, Santa Clara, CA (US);
Somnath Nag, Saratoga, CA (US);
Haiying Fu, West Linn, OR (US);
Atul Gupta, Mountain View, CA (US);
Bart J. Van Schravendijk, Sunnyvale, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Two sequential treatments within a chemical vapor deposition chamber, or within sequential chambers without a vacuum break, are performed on a copper layer to clean and passivate the copper surface prior to deposition of a copper diffusion barrier layer or a dielectric layer. The first treatment includes an ammonia, a hydrogen, or a hydrocarbon plasma cleaning of the copper surface followed by a short initiation of an organosilane precursor or a thin silicon nitride layer. A copper diffusion barrier layer may then be formed over the pretreated copper surface using an organosilane plasma, with or without a carbon dioxide or a carbon monoxide, or a silane with a nitrogen gas and an ammonia gas. Copper diffusion is retarded and film adhesion is improved for a dielectric layer or a copper diffusion barrier layer on the copper surface.