The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Aug. 09, 2004
Yongsik Yu, Lake Oswego, OR (US);
Atul Gupta, Santa Clara, CA (US);
Karen Billington, Beaverton, OR (US);
Michael Carris, Tualatin, OR (US);
William Crew, Portland, OR (US);
Thomas W. Mountsier, San Jose, CA (US);
Yongsik Yu, Lake Oswego, OR (US);
Atul Gupta, Santa Clara, CA (US);
Karen Billington, Beaverton, OR (US);
Michael Carris, Tualatin, OR (US);
William Crew, Portland, OR (US);
Thomas W. Mountsier, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.