Novellus Systems Incorporated

Other

Karen Billington

Yongsik Yu

William Crew

Michael Carris

Haiying Fu

Thomas W Mountsier

Xingyuan Tang

Atul Gupta

Robert Hepburn

Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or &#x3e;3:1; or &#x3e;4:1; or &#x3e;5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.

Low-K SiC copper diffusion barrier films

The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Low-k b-doped SiC copper diffusion barrier films

Low-k SiC copper diffusion barrier films

Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.

Boron-doped SIC copper diffusion barrier films

Low-k B-doped SiC copper diffusion barrier films

The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Film for copper diffusion barrier

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Beaverton, OR, United States of America

Karen Billington