The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Aug. 15, 2007
Yongsik Yu, Lake Oswego, OR (US);
Karen Billington, Beaverton, OR (US);
Xingyuan Tang, West Linn, OR (US);
Haiying Fu, West Linn, OR (US);
Michael Carris, Taulatin, OR (US);
William Crew, Portland, OR (US);
Yongsik Yu, Lake Oswego, OR (US);
Karen Billington, Beaverton, OR (US);
Xingyuan Tang, West Linn, OR (US);
Haiying Fu, West Linn, OR (US);
Michael Carris, Taulatin, OR (US);
William Crew, Portland, OR (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.